unisonic technologies co., ltd 11n40 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-219.d 11.4a, 400v n-channel power mosfet ? description the 11n40 uses utc?s advanced proprietary, planar stripe, dmos technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) = 0.52 ? @v gs = 10 v * ultra low gate charge ( typical 27 nc ) * low reverse transfer capacitance ( c rss = typical 20 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 11n40l-ta3-t 11N40G-TA3-T to-220 g d s tube 11n40l-tf3-t 11n40g-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source
11n40 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-219.d ? absolute maximum rating (t c =25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 400 v gate-source voltage v gss 30 v continuous drain current (t c = 25 ) i d 11.4 a pulsed drain current (note 2) i dm 46 a avalanche current (note 2) i ar 11.4 a single pulsed(note 3) e as 520 avalanche energy repetitive(note 2) e ar 14.7 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation 147 w derate above 25 p d 1.18 w/ junction temperature t j 150 storage temperature t stg -55 ~ +150 notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature. 3. l=7mh, i as =11.4a, v dd =50v, r g =25 ? , satarting t j =25c. 4. i sd 11.4a, di/dt 200a/ s, v dd bv dss , satarting t j =25c. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 /w junction to case jc 0.85 /w
11n40 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-219.d ? electrical characteristics (t j =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 400 v v ds =400v, v gs =0 v 1 zero gate voltage drain current i dss v ds =320v, t c =125c 10 a gate-body leakage current i gss v ds =0 v, v gs = 30 v 100 na breakdown voltage temperature c oefficient bv dss / t j i d =250 a, referenced to25c 0.42 mv/ on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 2.0 4.0 v static drain-source on-resistance r ds(on) v gs = 10 v, i d = 5.7 a 0.42 0.52 ? dynamic parameters input capacitance c iss 1100 1400 output capacitance c oss 180 240 reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1mhz 20 30 pf switching parameters turn-on delay time t d(on) 30 70 turn-on rise time t r 100 210 turn-off delay time t d(off) 60 130 turn-off fall-time t f v dd =200v, i d =11.4a, r gen =25 ? (note 1, 2) 60 130 ns total gate charge q g 27 35 gate source charge q gs 7.3 gate drain charge q gd v ds =320v, v gs =10v, i d =11.4a (note 1, 2) 12.3 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =11.4 a,v gs =0v 1.5 v maximum continuous drain-source diode forward current i s 11.4 maximum pulsed drain-source diode forward current i sm 46 a reverse recovery time t rr 240 ns reverse recovery charge q rr v gs = 0v, di f /dt = 100 a/ s, i s =11.4a (note 1) 1.8 c notes: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. independent of oper ating temperature.
11n40 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-219.d ? test circuit fig. 2a switching test circuit fig. 2b switching waveforms fig. 3a gate charge test circuit fig. 3b gate charge waveform d.u.t. r d 10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
11n40 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-219.d ? test circuit(cont.) same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period fig. 1a peak diode recovery dv/dt test circuit
11n40 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-219.d ? typical characteristics utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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